The HN2S03FE is a general purpose rectifier diode from Toshiba, featuring a maximum operating temperature of 125 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum reverse voltage of 25V and a maximum power dissipation of 0.1W. The diode is constructed with silicon and has a dual terminal position. It is packaged in an ES6, 1-2X1C, 6 PIN package.
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Technical Specifications
Toshiba HN2S03FE technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 6 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 3 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 25 |
| Power Dissipation-Max | 0.1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Toshiba HN2S03FE Datasheet
Download the complete datasheet for Toshiba HN2S03FE to view detailed technical specifications.
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