RF Transistor, NPN, Silicon, Dual configuration, 6-pin US package (SOT-363) for surface mount. Features 12V maximum collector-emitter voltage, 0.08A maximum DC collector current, and 200mW maximum power dissipation. Offers a minimum DC current gain of 80 at 20mA/10V, with a typical transition frequency of 7000MHz and a 2dB maximum noise figure. Operates within a temperature range of -55°C to 125°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba HN3C10FU(T5LKOTOB) technical specifications.
General
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Material | Si |
| Type | NPN |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 200mW |
| Minimum DC Current Gain | 80@20mA@10V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 10V/20mA |
| Typical Power Gain | 11.5dB |
Compliance
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba HN3C10FU(T5LKOTOB) Datasheet
Download the complete datasheet for Toshiba HN3C10FU(T5LKOTOB) to view detailed technical specifications.
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