HN3C51F-BL(TE85L,F

Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A

Frequency100MHz

PackageSOT-26

MountingSurface Mount

PolarityNPN

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Toshiba HN3C51F-BL(TE85L,F technical specifications.

Package/Case	SOT-26
Collector Base Voltage (VCBO)	120V
Collector Emitter Breakdown Voltage	120V
Collector Emitter Saturation Voltage	300mV
Collector Emitter Voltage (VCEO)	120V
Collector-emitter Voltage-Max	300mV
Emitter Base Voltage (VEBO)	5V
Frequency	100MHz
Gain Bandwidth Product	100MHz
hFE Min	200
Max Breakdown Voltage	120V
Max Collector Current	100mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300mW
Mount	Surface Mount
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	300mW
Radiation Hardening	No
Transition Frequency	100MHz

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.