Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba HN3C51F-BL(TE85L,F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Toshiba HN3C51F-BL(TE85L,F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.