Toshiba HN3C51F-GR(TE85L,F) technical specifications.
| Collector Emitter Breakdown Voltage | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Toshiba HN3C51F-GR(TE85L,F) to view detailed technical specifications.
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