Switching diode featuring a double dual common anode configuration. This surface-mount component offers an 85V peak reverse repetitive voltage and a 0.1A maximum continuous forward current. It boasts a fast 1.6ns peak reverse recovery time and a 2A peak non-repetitive surge current capability. Packaged in a compact 2mm x 1.25mm x 0.9mm USV (lead-frame SMT) with a 0.65mm pin pitch, it operates from -55°C to 150°C.
PackageUSV
MountingSurface Mount
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Technical Specifications
Toshiba HN4D01JU(T5RNITE,F technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | USV |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.006 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | Switching Diode |
| Configuration | Double Dual Common Anode |
| Peak Reverse Repetitive Voltage | 85V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 2A |
| Peak Forward Voltage | 1.2V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 1.6(Typ)ns |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operating Junction Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN4D01JU(T5RNITE,F Datasheet
Download the complete datasheet for Toshiba HN4D01JU(T5RNITE,F to view detailed technical specifications.
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