Switching rectifier diode, 85V peak reverse voltage, 0.3A continuous forward current. Features 1.6ns typical reverse recovery time and 2A peak surge current. Housed in a 5-pin USV package with gull-wing leads for surface mounting, measuring 2mm x 1.25mm x 0.9mm. Double dual common cathode configuration.
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Toshiba HN4D02JU(T5RNITEN) technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package/Case | USV |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.006 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | Switching Diode |
| Configuration | Double Dual Common Cathode |
| Peak Reverse Repetitive Voltage | 85V |
| Maximum Continuous Forward Current | 0.3A |
| Peak Non-Repetitive Surge Current | 2A |
| Peak Forward Voltage | [email protected]V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 1.6(Typ)ns |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operating Junction Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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