Dual NPN RF transistor in a 6-pin TU6 surface-mount package. Features include a maximum collector-emitter voltage of 8V or 12V, maximum collector current of 15mA or 80mA, and a maximum power dissipation of 200mW. Minimum DC current gain ranges from 50 to 120, with maximum transition frequencies of 10000MHz or 7000MHz. Operating temperature range is -55°C to 125°C.
PackageTU6
MountingSurface Mount
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Technical Specifications
Toshiba HN9C01FT(T5LMDNS,F technical specifications.
General
| Package Family Name | TU6 |
| Package/Case | TU6 |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.6 |
| Package Weight (g) | 0.008 |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector-Emitter Voltage | 8@TR 1|12@TR 2V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 1.5@TR 1|3@TR 2V |
| Maximum DC Collector Current | 0.015@TR 1|0.08@TR 2A |
| Maximum Power Dissipation | 200mW |
| Minimum DC Current Gain | 50@7mA@6V@TR 1|80@20mA@10V@TR 2 |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 10000(Typ)@TR 1|7000(Typ)@TR 2MHz |
| Maximum Noise Figure | 3@TR 1|2@TR 2dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 6V/7mA@TR 1|10V/20mA@TR 2 |
| Typical Power Gain | 13@TR 1|16.5@TR 2dB |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba HN9C01FT(T5LMDNS,F Datasheet
Download the complete datasheet for Toshiba HN9C01FT(T5LMDNS,F to view detailed technical specifications.
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