The JDP2S04E(TPL3,F) is a single configuration RF diode from Toshiba with a maximum reverse voltage of 50V and maximum forward current of 50mA. It features a surface mount package with a seated plane height of 0.6mm and is made of glass material. The diode operates within a temperature range of -55°C to 125°C and is suitable for VHF and UHF frequency ranges.
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Toshiba JDP2S04E(TPL3,F) technical specifications.
| Package/Case | ESC |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 1.2 |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.6 |
| Seated Plane Height (mm) | 0.6 |
| Package Material | Glass |
| Mounting | Surface Mount |
| Type | Attenuator |
| Configuration | Single |
| Maximum Reverse Voltage | 50V |
| Maximum Forward Current | 50mA |
| Maximum Forward Voltage | 1V |
| Maximum Series Resistance @ Maximum IF | 3(Typ)@10mAOhm |
| Maximum Diode Capacitance | 0.4@50VpF |
| Frequency Range | VHF|UHF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba JDP2S04E(TPL3,F) to view detailed technical specifications.
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