Single-phase bridge rectifier diode featuring a maximum repetitive peak reverse voltage of 600V and a minimum breakdown voltage of 600V. This silicon diode offers a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It comprises four diode elements and has four terminals in a dual configuration.
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Technical Specifications
Toshiba MB6S technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
| Breakdown Voltage-Min | 600 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Toshiba MB6S Datasheet
Download the complete datasheet for Toshiba MB6S to view detailed technical specifications.
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