NPN Darlington transistor featuring a 70V maximum collector-emitter voltage and 5A maximum continuous DC collector current. This quad configuration transistor offers 4000mW maximum power dissipation and a minimum DC current gain of 1000. Housed in a 10-pin plastic SIP package with through-hole mounting, it operates across a temperature range of -55°C to 150°C.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba MP4015(LB-XERX3105 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
SIP
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
10
PCB
10
Package Length (mm)
25.2
Package Width (mm)
4
Package Height (mm)
9
Seated Plane Height (mm)
11.3
Package Weight (g)
2.1
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Quad
Number of Elements per Chip
4
Maximum Collector-Emitter Voltage
70V
Maximum Collector Base Voltage
55V
Maximum Emitter Base Voltage
6V
Maximum Continuous DC Collector Current
5A
Maximum Power Dissipation
4000mW
Maximum Base Emitter Saturation Voltage
2@4mA@1AV
Maximum Collector-Emitter Saturation Voltage
1.4@4mA@1AV
Minimum DC Current Gain
1000@1A@4V|1000@3A@4V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba MP4015(LB-XERX3105 Datasheet
Download the complete datasheet for Toshiba MP4015(LB-XERX3105 to view detailed technical specifications.
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