NPN Darlington transistor featuring a 70V collector-emitter voltage and 5A continuous DC collector current. This quad-configuration bipolar junction transistor offers 4000mW maximum power dissipation and a minimum DC current gain of 1000. Housed in a 10-pin Single In Line Package (SIP) with through-hole mounting, it operates across a temperature range of -55°C to 150°C.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba MP4015(XERXW03105) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
SIP
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
10
PCB
10
Package Length (mm)
25.2
Package Width (mm)
4
Package Height (mm)
9
Seated Plane Height (mm)
11.3
Package Weight (g)
2.1
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Quad
Number of Elements per Chip
4
Maximum Collector-Emitter Voltage
70V
Maximum Collector Base Voltage
55V
Maximum Emitter Base Voltage
6V
Maximum Continuous DC Collector Current
5A
Maximum Power Dissipation
4000mW
Maximum Base Emitter Saturation Voltage
2@4mA@1AV
Maximum Collector-Emitter Saturation Voltage
1.4@4mA@1AV
Minimum DC Current Gain
1000@1A@4V|1000@3A@4V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba MP4015(XERXW03105) Datasheet
Download the complete datasheet for Toshiba MP4015(XERXW03105) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.