Quad N/P-channel enhancement mode silicon power MOSFETs designed for through-hole mounting. Featuring a 10-pin Single In Line Package (SIP) with a maximum drain-source voltage of 60V and a continuous drain current of 5A. Offers low on-resistance with 130mOhm for N-channel and 250mOhm for P-channel at 10V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 4000mW.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba MP4207(Q) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 10 |
| PCB | 10 |
| Package Length (mm) | 25.2 |
| Package Width (mm) | 4 |
| Package Height (mm) | 9 |
| Seated Plane Height (mm) | 11.3 |
| Package Weight (g) | 2.1 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Quad |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 4 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 130@10V@N Channel|250@10V@P ChannelmOhm |
| Typical Gate Charge @ Vgs | 20@10V@N Channel|22@10V@P ChannelnC |
| Typical Gate Charge @ 10V | 20@N Channel|22@P ChannelnC |
| Typical Input Capacitance @ Vds | 500@10VpF |
| Maximum Power Dissipation | 4000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba MP4207(Q) Datasheet
Download the complete datasheet for Toshiba MP4207(Q) to view detailed technical specifications.
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