Quad NPN Darlington transistor in a 12-pin SIP package. Features a maximum collector-emitter voltage of 100V and a continuous DC collector current of 3A. Offers a maximum power dissipation of 4400mW. Designed for through-hole mounting with a plastic package. Operates across a temperature range of -55°C to 150°C.
Toshiba MP4301(LB1HITACHI2 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 12 |
| PCB | 12 |
| Package Length (mm) | 31.5 |
| Package Width (mm) | 4 |
| Package Height (mm) | 10.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Quad |
| Number of Elements per Chip | 4 |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Continuous DC Collector Current | 3A |
| Maximum Power Dissipation | 4400mW |
| Maximum Base Emitter Saturation Voltage | 2@[email protected]V |
| Maximum Collector-Emitter Saturation Voltage | 1.5@[email protected]V |
| Minimum DC Current Gain | 1000@3A@2V|[email protected]@2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba MP4301(LB1HITACHI2 to view detailed technical specifications.
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