NPN Darlington transistor featuring a 100V collector-emitter voltage and 2A continuous DC collector current. This quad-configuration bipolar junction transistor offers a maximum power dissipation of 4400mW and is housed in a 12-pin Single In Line Package (SIP) designed for through-hole mounting. Key specifications include a 120V maximum collector-base voltage and a minimum DC current gain of 1000 at 2A/2V. Operating temperature range spans from -55°C to 150°C.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba MP4303(LBKMATU1) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 12 |
| PCB | 12 |
| Package Length (mm) | 31.5 |
| Package Width (mm) | 4 |
| Package Height (mm) | 10.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Quad |
| Number of Elements per Chip | 4 |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Continuous DC Collector Current | 2A |
| Maximum Power Dissipation | 4400mW |
| Maximum Base Emitter Saturation Voltage | 2@1mA@1AV |
| Maximum Collector-Emitter Saturation Voltage | 1.5@1mA@1AV |
| Minimum DC Current Gain | 1000@2A@2V|2000@1A@2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba MP4303(LBKMATU1) Datasheet
Download the complete datasheet for Toshiba MP4303(LBKMATU1) to view detailed technical specifications.
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