NPN Bipolar Junction Transistor (BJT) with a Quad Common Emitter configuration, featuring 4 elements per chip. This through-hole mounted component offers a maximum collector-emitter voltage of 80V and a maximum DC collector current of 3A. It boasts a minimum DC current gain of 600 at 1A/2V and 150 at 2A/2V, with a typical transition frequency of 85MHz. Housed in a 12-pin plastic Single In Line Package (SIP) measuring 31.5mm x 4mm x 10.5mm, it operates within a temperature range of -55°C to 150°C.
PackageSIP
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba MP4304(LBND) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 12 |
| PCB | 12 |
| Package Length (mm) | 31.5 |
| Package Width (mm) | 4 |
| Package Height (mm) | 10.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Quad Common Emitter |
| Number of Elements per Chip | 4 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 4400mW |
| Material | Si |
| Minimum DC Current Gain | 600@1A@2V|150@2A@2V |
| Maximum Transition Frequency | 85(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba MP4304(LBND) Datasheet
Download the complete datasheet for Toshiba MP4304(LBND) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.