N-channel enhancement mode power MOSFET featuring 120V drain-source voltage and 5A continuous drain current. This quad MOSFET is housed in a 12-pin SIP package with through-hole mounting and a 2.54mm pin pitch. Key specifications include a maximum power dissipation of 4400mW and a low drain-source on-resistance of 300mOhm at 10V. Operating temperature range is -55°C to 150°C.
Toshiba MP4403(Q) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 12 |
| PCB | 12 |
| Package Length (mm) | 31.5 |
| Package Width (mm) | 4 |
| Package Height (mm) | 10.5 |
| Seated Plane Height (mm) | 12.7 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Quad |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 4 |
| Maximum Drain Source Voltage | 120V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 300@10VmOhm |
| Typical Gate Charge @ Vgs | 27@10VnC |
| Typical Gate Charge @ 10V | 27nC |
| Typical Input Capacitance @ Vds | 540@10VpF |
| Maximum Power Dissipation | 4400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
No datasheet is available for this part.
