The Toshiba MP4411(Q) is a 4 N-Channel MOSFET with a maximum drain to source voltage of 100V and continuous drain current of 3A. It has a maximum power dissipation of 4.4W and an input capacitance of 280pF. The device is packaged in a SIP package and is available in a lead-free version. It is suitable for use in a variety of applications, including power management and switching circuits.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba MP4411(Q) technical specifications.
General
| Package/Case | SIP |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 4 N-Channel |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 4.4W |
| Mount | Through Hole |
| Package Quantity | 20 |
| Packaging | Bulk |
| Rds On Max | 350mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba MP4411(Q) Datasheet
Download the complete datasheet for Toshiba MP4411(Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.