Power MOSFET featuring N/P-channel enhancement mode silicon construction. This component offers a maximum drain-source voltage of 60V and a continuous drain current of 10A. It is configured as a Hex with six elements per chip, presented in a 12-pin through-hole package with a tab. Key electrical characteristics include a maximum drain-source resistance of 80mOhm (N-channel) and 125mOhm (P-channel) at 10V, with typical gate charge values of 30nC (N-channel) and 45nC (P-channel) at 10V. Operating temperature range spans from -55°C to 150°C.
MountingThrough Hole
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Technical Specifications
Toshiba MP6801(Q) technical specifications.
General
| Basic Package Type | Through Hole |
| Pin Count | 12 |
| PCB | 12 |
| Tab | Tab |
| Package Length (mm) | 31.5 |
| Package Width (mm) | 5.1 |
| Package Height (mm) | 16.1 |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Configuration | Hex |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 6 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 80@10V@N Channel|125@10V@P ChannelmOhm |
| Typical Gate Charge @ Vgs | 30@10V@N Channel|45@10V@P ChannelnC |
| Typical Gate Charge @ 10V | 30@N Channel|45@P ChannelnC |
| Typical Input Capacitance @ Vds | 750@10V@N Channel|1200@10V@P ChannelpF |
| Maximum Power Dissipation | 5000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba MP6801(Q) Datasheet
Download the complete datasheet for Toshiba MP6801(Q) to view detailed technical specifications.
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