NPN RF BJT transistor for surface mount applications. Features a 5V collector-emitter voltage and 0.04A collector current. This single-element silicon transistor offers a maximum power dissipation of 100mW and a typical transition frequency of 10000MHz. Housed in a 3-pin SSM (SOT-416) plastic package with gull-wing leads, it has a pin pitch of 0.5mm. Operating temperature range is -55°C to 125°C.
PackageSSM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba MT3S03AS(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
5V
Maximum Collector Base Voltage
10V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.04A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
80@5mA@1V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
10000(Typ)MHz
Maximum Noise Figure
3dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
3V/20mA
Typical Power Gain
8dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba MT3S03AS(TE85L,F) Datasheet
Download the complete datasheet for Toshiba MT3S03AS(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.