RF NPN Bipolar Junction Transistor for surface mount applications. Features a 3-pin TESM package with dimensions of 1.4mm (L) x 0.8mm (W) x 0.59mm (H) and a 0.45mm pin pitch. Offers a maximum collector-emitter voltage of 5V and a maximum DC collector current of 0.04A. Achieves a maximum transition frequency of 10000MHz and a typical power gain of 8dB, with a maximum noise figure of 3dB. Operates within a temperature range of -55°C to 125°C.
PackageTESM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba MT3S03AT(T5LIWAKI) technical specifications.
General
| Package/Case | TESM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.4 |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.59 |
| Pin Pitch (mm) | 0.45 |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 5V |
| Maximum Collector Base Voltage | 10V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.04A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 80@5mA@1V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 10000(Typ)MHz |
| Maximum Noise Figure | 3dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 3V/20mA |
| Typical Power Gain | 8dB |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba MT3S03AT(T5LIWAKI) Datasheet
Download the complete datasheet for Toshiba MT3S03AT(T5LIWAKI) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.