NPN RF Bipolar Junction Transistor for surface mount applications. Features a maximum collector-emitter voltage of 6V and a maximum DC collector current of 0.1A, with a power dissipation of 300mW. This single-element transistor boasts a typical transition frequency of 8000MHz and a low noise figure of 1.25dB. Housed in a 4-pin PW-Mini SOT package with flat leads, it offers a 1.5mm pin pitch and operates from -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba MT3S111P technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | PW-Mini |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 6V |
| Maximum Emitter Base Voltage | 0.6V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 300mW |
| Minimum DC Current Gain | 200@30mA@5V |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum Transition Frequency | 8000(Typ)MHz |
| Maximum Noise Figure | 1.25dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operational Bias Conditions | 5V/30mA |
| Maximum 3rd Order Intercept Point | 32(Typ)dBm |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba MT3S111P Datasheet
Download the complete datasheet for Toshiba MT3S111P to view detailed technical specifications.
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