RF BJT NPN transistor with a 12V maximum collector-emitter voltage and 0.08A maximum DC collector current. Features 900mW maximum power dissipation and a minimum DC current gain of 100 at 50mA/5V. This single-element, surface-mount transistor is housed in a 3-pin UFM package measuring 2mm x 1.7mm with a 0.65mm pin pitch. It offers a maximum transition frequency of 7000MHz and a typical power gain of 17.5 dB.
PackageUFM
MountingSurface Mount
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Technical Specifications
Toshiba MT3S20TU technical specifications.
General
| Package Family Name | UFM |
| Package/Case | UFM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.7 |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 900mW |
| Minimum DC Current Gain | 100@50mA@5V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operational Bias Conditions | 5V/50mA |
| Typical Power Gain | 17.5dB |
| Maximum 3rd Order Intercept Point | 30(Typ)dBm |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba MT3S20TU Datasheet
Download the complete datasheet for Toshiba MT3S20TU to view detailed technical specifications.
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