RF BJT NPN transistor, single dual emitter configuration, fabricated from silicon. Features a 4-pin USQ surface mount package with dimensions of 2mm (L) x 1.25mm (W) x 0.95mm (H). Operates with a maximum collector-emitter voltage of 3V and a maximum collector current of 0.01A. Achieves a maximum transition frequency of 23000MHz, a typical noise figure of 0.95dB, and a typical power gain of 16.5dB. Rated for operation between -55°C and 150°C.
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| Package/Case | USQ |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 1.1 |
| Package Weight (g) | 0.006 |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 3V |
| Maximum Collector Base Voltage | 6V |
| Maximum Emitter Base Voltage | 1.2V |
| Maximum DC Collector Current | 0.01A |
| Maximum Power Dissipation | 30mW |
| Minimum DC Current Gain | 200@7mA@2V |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum Transition Frequency | 23000(Typ)MHz |
| Maximum Noise Figure | 0.95dB |
| Typical Output Capacitance | 0.26pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operational Bias Conditions | 2V/7mA |
| Typical Power Gain | 16.5dB |
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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