RF Transistor, NPN SiGe, single dual emitter configuration. Features a 4V collector-emitter voltage, 0.035A collector current, and 100mW power dissipation. Offers a minimum DC current gain of 100 at 15mA/3V, with a gain range of 50-120. Operates with a maximum transition frequency of 30000MHz and a 1dB noise figure. Packaged in a 4-pin USQ surface mount with dimensions of 2mm x 1.25mm x 0.95mm.
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| Package/Case | USQ |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 1.1 |
| Package Weight (g) | 0.006 |
| Mounting | Surface Mount |
| Material | SiGe |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 4V |
| Maximum Collector Base Voltage | 8V |
| Maximum Emitter Base Voltage | 1.2V |
| Maximum DC Collector Current | 0.035A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 100@15mA@3V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 30000(Typ)MHz |
| Maximum Noise Figure | 1dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operational Bias Conditions | 3V/15mA |
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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