N-channel RF MOSFET transistor, single depletion mode configuration, designed for surface mounting. Features a 16V maximum drain-source voltage and 2A maximum continuous drain current. Packaged in a 4-pin PW-Mini SOT lead-frame SMT with a 1.5mm pin pitch, offering 7000mW maximum power dissipation. Operates across a temperature range of -45°C to 150°C, delivering typical power gain of 13.3 dB and 4.3W typical output power.
PackagePW-Mini
MountingSurface Mount
Power4.3(Typ)W
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Technical Specifications
Toshiba RFM04U6P technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | PW-Mini |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Depletion |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 16V |
| Maximum Continuous Drain Current | 2A |
| Maximum Power Dissipation | 7000mW |
| Min Operating Temperature | -45°C |
| Max Operating Temperature | 150°C |
| Typical Power Gain | 13.3dB |
| Output Power | 4.3(Typ)W |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba RFM04U6P Datasheet
Download the complete datasheet for Toshiba RFM04U6P to view detailed technical specifications.
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