The RN1111F(TPL3,F) is a surface mount NPN transistor with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. It has a maximum power dissipation of 100mW and a typical input resistor of 10. The transistor's minimum DC current gain is 120 at 1mA and 5V, and it operates over a temperature range of -55 to 150 degrees Celsius.
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Toshiba RN1111F(TPL3,F) technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | ESM |
| Package/Case | SSM |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.7 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | SC-89 |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 100mW |
| Typical Input Resistor | 10kOhm |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 120@1mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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