The Toshiba RN1112MFV(TPL3) is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a high current gain of 700 and a maximum power dissipation of 150mW. The transistor is packaged in a SOT-723 case and is suitable for operation over a temperature range of -55°C to 150°C. The RN1112MFV(TPL3) is RoHS compliant and available in quantities of 8000 per reel.
PackageSOT-723
MountingSurface Mount
PolarityNPN
Power150mW
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Technical Specifications
Toshiba RN1112MFV(TPL3) technical specifications.
General
| Package/Case | SOT-723 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 700 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba RN1112MFV(TPL3) Datasheet
Download the complete datasheet for Toshiba RN1112MFV(TPL3) to view detailed technical specifications.
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