NPN Digital Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. Offers 100mW maximum power dissipation with a typical input resistor of 10 kOhm. Housed in a 3-pin SSM (SC-89) plastic package with flat leads, measuring 1.6mm x 0.8mm x 0.7mm with a 0.5mm pin pitch. Operates across a wide temperature range from -55°C to 150°C.
PackageSSM
MountingSurface Mount
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Technical Specifications
Toshiba RN1117F(T5LMAT-V) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
ESM
Package/Case
SSM
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SC-89
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
100mA
Maximum Power Dissipation
100mW
Typical Input Resistor
10kOhm
Typical Resistor Ratio
2.13
Maximum Collector-Emitter Saturation Voltage
[email protected]@5mAV
Minimum DC Current Gain
30@10mA@5V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba RN1117F(T5LMAT-V) Datasheet
Download the complete datasheet for Toshiba RN1117F(T5LMAT-V) to view detailed technical specifications.
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