The RN1211(TE4,T) is a single NPN transistor with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. It has a maximum power dissipation of 300mW and a typical input resistor of 10 ohms. The transistor is mounted through a hole and has a package height of 3.2mm. It operates within a temperature range of -55 to 150 degrees Celsius.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba RN1211(TE4,T) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.2(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 3.2(Max) |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 300mW |
| Typical Input Resistor | 10kOhm |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 120@1mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba RN1211(TE4,T) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
