The RN1413TE85,F is a surface mount bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 200mW. The transistor is packaged in a TO-236-3 case and is available in quantities of 3000 on tape and reel.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Toshiba RN1413TE85,F technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba RN1413TE85,F Datasheet
Download the complete datasheet for Toshiba RN1413TE85,F to view detailed technical specifications.
No datasheet is available for this part.