
NPN digital bipolar junction transistor (BRT) for surface mount applications. Features a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current, with a 300mW maximum power dissipation. Housed in a 5-pin SMV (SOT-25) small outline plastic package with gull-wing leads. Includes a typical input resistor of 22 kOhm and operates across a temperature range of -55°C to 150°C.
Toshiba RN1508(TE85L,F) technical specifications.
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