
NPN digital bipolar junction transistor featuring a dual common emitter configuration. This surface-mount device operates with a maximum collector-emitter voltage of 50V and a continuous DC collector current of 100mA, offering 300mW maximum power dissipation. It includes a typical input resistor of 47 kOhm and a resistor ratio of 2.14. Packaged in a 5-pin SMV (SOT-25) small outline transistor with gull-wing leads, it measures 2.9mm x 1.6mm x 1.1mm with a 0.95mm pin pitch. Operating temperature range is -55°C to 150°C.
Toshiba RN1509(TE85L,F) technical specifications.
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