The RN1964FE(TE85L,F) is a dual NPN transistor from Toshiba. It has a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. The device can dissipate up to 100mW of power. It is designed for surface mount applications and is packaged in an ES package. The transistor operates over a temperature range of -55°C to 150°C.
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Toshiba RN1964FE(TE85L,F) technical specifications.
| Package/Case | ES |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Pin Pitch (mm) | 0.5 |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Dual |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 100mW |
| Typical Input Resistor | 47kOhm |
| Typical Resistor Ratio | 1 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 80@10mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba RN1964FE(TE85L,F) to view detailed technical specifications.
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