
PNP Digital BJT Transistor, single configuration, designed for surface mount applications. Features a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. Offers 100mW maximum power dissipation with a typical input resistor of 22 kOhm. Packaged in a 3-pin SSM (SC-89) lead-frame SMT package with flat leads, measuring 1.6mm x 0.8mm x 0.7mm with a 0.5mm pin pitch. Operates across a temperature range of -55°C to 150°C.
Toshiba RN2103F(T5LMAT-V) technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | ESM |
| Package/Case | SSM |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.7 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | SC-89 |
| Type | PNP |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 100mW |
| Typical Input Resistor | 22kOhm |
| Typical Resistor Ratio | 1 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 70@10mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba RN2103F(T5LMAT-V) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.