The RN2115MFV(TPL3) is a PNP bipolar junction transistor from Toshiba. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor is packaged in a surface mount SOT-723 package and is rated for operation between -65°C and 150°C. It has a minimum current gain of 50 and a maximum power dissipation of 150mW.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba RN2115MFV(TPL3) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-723 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 50 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Toshiba RN2115MFV(TPL3) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
