The RN2117MFV(TPL3) is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a surface-mount SOT-723 package and is suitable for operation over a temperature range of -65°C to 150°C. The transistor has a minimum current gain of 30 and a maximum power dissipation of 150mW. It is RoHS compliant and available in quantities of 8000 per reel.
PackageSOT-723
MountingSurface Mount
PolarityPNP
Power150mW
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Technical Specifications
Toshiba RN2117MFV(TPL3) technical specifications.
General
| Package/Case | SOT-723 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -15V |
| hFE Min | 30 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba RN2117MFV(TPL3) Datasheet
Download the complete datasheet for Toshiba RN2117MFV(TPL3) to view detailed technical specifications.
No datasheet is available for this part.