The RN2304(TE85L,F) is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 100mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a surface mount configuration and is available in quantities of 3000. It is compliant with RoHS regulations and is not radiation hardened.
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| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| RoHS | Compliant |
Download the complete datasheet for Toshiba RN2304(TE85L,F) to view detailed technical specifications.
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