The RN2315TE85LF is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 100mW. The transistor is packaged in a surface mount SC package and is RoHS compliant. It is not radiation hardened.
PackageSC
MountingSurface Mount
PolarityPNP
Power100mW
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Technical Specifications
Toshiba RN2315TE85LF technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| hFE Min | 50 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba RN2315TE85LF Datasheet
Download the complete datasheet for Toshiba RN2315TE85LF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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