The Toshiba RN4907FE(TLR3MBS,F is a dual NPN/PNP transistor with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. It has a maximum power dissipation of 100mW and a typical input resistor of 10 ohms. The transistor is available in a 6-pin ES package with a package length of 1.6mm and a package width of 1.2mm. It can operate between -55°C and 150°C. The transistor is suitable for surface mount applications.
Sign in to ask questions about the Toshiba RN4907FE(TLR3MBS,F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba RN4907FE(TLR3MBS,F technical specifications.
| Package/Case | ES |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Pin Pitch (mm) | 0.5 |
| Mounting | Surface Mount |
| Type | NPN|PNP |
| Configuration | Dual |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 100mW |
| Typical Input Resistor | 10kOhm |
| Typical Resistor Ratio | 0.213 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 80@10mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba RN4907FE(TLR3MBS,F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
