
The S5295J(Q) is a single switching diode with a peak reverse repetitive voltage of 600V and a maximum continuous forward current of 0.5A at 50°C. It features a peak non-repetitive surge current of 33A and a peak forward voltage of 1.5V at 1A. The diode has a peak reverse recovery time of 1500ns and operates over a temperature range of -40 to 125°C. It is available in a through hole package with a DO-15 case and a 3.4mm diameter.
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Toshiba S5295J(Q) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | DO-204-AC |
| Package/Case | DO-15 |
| Package Description | Axial Lead Package |
| Lead Shape | Through Hole |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 6 |
| Package Diameter (mm) | 3.4 |
| Mounting | Through Hole |
| Jedec | DO-204AC |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 600V |
| Maximum Continuous Forward Current | 0.5@Ta=50CA |
| Peak Non-Repetitive Surge Current | 33A |
| Peak Forward Voltage | 1.5@1AV |
| Peak Reverse Current | 10uA |
| Peak Reverse Recovery Time | 1500ns |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | -40 to 125°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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