P-channel MOSFET, single element, enhancement mode, silicon. Features 30V drain-source voltage and 0.2A continuous drain current. Encased in a compact 3-pin USM (SOT-323) surface-mount package measuring 2mm x 1.25mm x 0.9mm. Offers a maximum drain-source resistance of 2700 mOhm at 10V and typical input capacitance of 22pF at 5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 150mW.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J09FU(F) technical specifications.
General
Package Family Name
USM
Package/Case
USM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Mounting
Surface Mount
Jedec
SOT-323
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.2A
Material
Si
Maximum Drain Source Resistance
2700@10VmOhm
Typical Input Capacitance @ Vds
22@5VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J09FU(F) Datasheet
Download the complete datasheet for Toshiba SSM3J09FU(F) to view detailed technical specifications.
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