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Toshiba SSM3J108TU(TE85L) technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 158mR |
| RoHS Compliant | No |
| Series | U-MOSIII |
| RoHS | Not CompliantNo |
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