PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power800mW
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Technical Specifications
Toshiba SSM3J112TU(TE85L) technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
1.1A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
610mR
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
86pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
800mW
Radiation Hardening
No
Rds On Max
390mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Toshiba SSM3J112TU(TE85L) Datasheet
Download the complete datasheet for Toshiba SSM3J112TU(TE85L) to view detailed technical specifications.
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