Sign in to ask questions about the Toshiba SSM3J117TU(TE85L) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba SSM3J117TU(TE85L) technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 117mR |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Toshiba SSM3J117TU(TE85L) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
