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Technical Specifications
Toshiba SSM3J117TU(TE85L) technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 117mR |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba SSM3J117TU(TE85L) Datasheet
Download the complete datasheet for Toshiba SSM3J117TU(TE85L) to view detailed technical specifications.
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