P-channel enhancement mode MOSFET for small signal applications. Features a 20V drain-source voltage rating and 4.4A continuous drain current. Surface mountable in a 3-pin UFM package with dimensions of 2mm x 1.7mm and a 0.65mm pin pitch. Utilizes U-MOS VI process technology.
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Toshiba SSM3J130TU(T5L,T) technical specifications.
| Package/Case | UFM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.7 |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS VI |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 4.4A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1800@10VpF |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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