P-channel enhancement mode MOSFET for small signal applications. Features a 20V drain-source voltage rating and 4.4A continuous drain current. Surface mountable in a 3-pin UFM package with dimensions of 2mm x 1.7mm and a 0.65mm pin pitch. Utilizes U-MOS VI process technology.
PackageUFM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J130TU(T5L,T) technical specifications.
General
Package/Case
UFM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.7
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
U-MOS VI
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
4.4A
Material
Si
Maximum Gate Threshold Voltage
1V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1800@10VpF
Maximum Power Dissipation
800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J130TU(T5L,T) Datasheet
Download the complete datasheet for Toshiba SSM3J130TU(T5L,T) to view detailed technical specifications.
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