P-channel MOSFET, single element, enhancement mode, silicon construction. Features 30V drain-source voltage, ±20V gate-source voltage, and 2.7A continuous drain current. Offers low 85mΩ drain-source resistance at 10V and 413pF input capacitance at 15V. Packaged in a 3-pin TSM SOT surface-mount plastic housing with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Supports a maximum power dissipation of 1250mW and operates from -55°C to 150°C.
PackageTSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J14T(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
TSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.6
Package Height (mm)
0.7
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
2.7A
Material
Si
Maximum Drain Source Resistance
85@10VmOhm
Typical Input Capacitance @ Vds
413@15VpF
Maximum Power Dissipation
1250mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba SSM3J14T(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM3J14T(TE85L,F) to view detailed technical specifications.
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