P-channel MOSFET, single element, enhancement mode, silicon construction. Features 30V drain-source voltage, ±20V gate-source voltage, and 2.7A continuous drain current. Offers low 85mΩ drain-source resistance at 10V and 413pF input capacitance at 15V. Packaged in a 3-pin TSM SOT surface-mount plastic housing with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Supports a maximum power dissipation of 1250mW and operates from -55°C to 150°C.
PackageTSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J14T(TE85L,F) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | TSM |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2.7A |
| Material | Si |
| Maximum Drain Source Resistance | 85@10VmOhm |
| Typical Input Capacitance @ Vds | 413@15VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba SSM3J14T(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM3J14T(TE85L,F) to view detailed technical specifications.
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