P-channel silicon MOSFET, enhancing mode, single element configuration. Features 30V drain-source voltage, 0.1A continuous drain current, and 12000 mOhm drain-source resistance at 4V. Packaged in a 3-pin S-Mini surface-mount plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates from -55°C to 150°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J15F(TE85R) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
12000@4VmOhm
Typical Input Capacitance @ Vds
9.1@3VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J15F(TE85R) Datasheet
Download the complete datasheet for Toshiba SSM3J15F(TE85R) to view detailed technical specifications.
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