P-channel enhancement mode silicon MOSFET for small signal applications. Features a 30V drain-source voltage and 0.1A continuous drain current. Housed in a 3-pin S-Mini surface-mount package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Offers a maximum power dissipation of 200mW and a drain-source on-resistance of 12000mΩ at 4V. Operates across a wide temperature range from -55°C to 150°C.
PackageS-Mini
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba SSM3J15F(TE85R,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
12000@4VmOhm
Typical Input Capacitance @ Vds
9.1@3VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J15F(TE85R,F) Datasheet
Download the complete datasheet for Toshiba SSM3J15F(TE85R,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.