P-channel MOSFET transistor for surface mount applications. Features 20V drain-source voltage, 0.1A continuous drain current, and 8000 mOhm drain-source resistance at 4V. This single-element, enhancement-mode transistor utilizes pi-MOS VI process technology and is housed in a 3-pin SOT-416 (SSM) plastic package with gull-wing leads. Operating temperature range is -55°C to 150°C.
PackageSSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J16FS(TE85R) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
pi-MOS VI
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
8000@4VmOhm
Typical Input Capacitance @ Vds
11@3VpF
Maximum Power Dissipation
100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J16FS(TE85R) Datasheet
Download the complete datasheet for Toshiba SSM3J16FS(TE85R) to view detailed technical specifications.
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