
The SSM3J306T(TE85L,F) is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.4A and a drain to source voltage of 30V. The device has a drain to source resistance of 160mR and a maximum power dissipation of 700mW. It is packaged in a TO-236-3 surface mount package and is RoHS compliant.
Toshiba SSM3J306T(TE85L,F) technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 117mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 16ns |
| RoHS | Compliant |
Download the complete datasheet for Toshiba SSM3J306T(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
